Electronic heat conductivity in a two-temperature state

Abstract

Laser irradiation of materials is most commonly modeled with the two-temperature model (TTM), or its combination with molecular dynamics, TTM-MD. For such modeling, the electronic transport coefficients are required. Here, we calculate the electronic heat conductivity at elevated electron temperatures up to 40,000 K. We apply the tight binding formalism to calculate the electron-phonon contribution to the electronic heat conductivity, and the linear response theory (in the single-pole Ritchie-Howie loss function approximation) for its electron-electron counterpart, implemented in the hybrid code XTANT-3. It allows us evaluation of the electronic heat conductivity in a wide range of materials - fcc metals: Al, Ca, Ni, Cu, Sr, Y, Zr, Rh, Pd, Ag, Ir, Pt, Au, and Pb; hcp metals: Mg, Sc, Ti, Co, Zn, Tc, Ru, Cd, Hf, Re, and Os; bcc metals: V, Cr, Fe, Nb, Mo, Ba, Ta, and W; other metals: Sn, Ga, In, Mn, Te, and Se; semimetal graphite; semiconductors - group IV: Si, Ge, and SiC; group III-V: AlAs, AlP, GaP, GaAs, and GaSb; oxides: ZnO, TiO$_2$, and Cu$_2$O; and others: PbI$_2$, ZnS, and B$_4$C.