Numerically exact simulation of photo-doped Mott insulators

Abstract

A description of long-lived photo-doped states in Mott insulators is challenging, as it needs to address exponentially separated timescales. We demonstrate how properties of such states can be computed using numerically exact steady state techniques, in particular Quantum Monte Carlo, by using a time-local ansatz for the distribution function with separate Fermi functions for the electron and hole quasiparticles. The simulations show that the Mott gap remains robust to large photo-doping, and the photo-doped state has hole and electron quasiparticles with strongly renormalized properties.