Carrier density crossover and quasiparticle mass enhancement in a doped 5$d$ Mott insulator

Abstract

High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Robust signatures of the low-doped electronic state include a Hall carrier density that initially tracks the number of doped holes and the emergence of an anisotropic pseudogap; the latter characterised by disconnected Fermi arcs, closure at a critical doping level $p^* \approx 0.19$, and, in some cases, a strongly enhanced carrier effective mass. In Sr$_2$IrO$_4$, a spin-orbit-coupled Mott insulator often regarded as a 5$d$ analogue of the cuprates, surface probes have revealed the emergence of an anisotropic pseudogap and Fermi arcs under electron doping, though neither the corresponding $p^*$ nor bulk signatures of pseudogap closing have as yet been observed. Here, we report electrical transport and specific heat measurements on Sr$_{2-x}$La$_x$IrO$_4$ over an extended doping range 0 $\leq x \leq$ 0.20. The effective carrier density $n_{\rm H}$ at low temperatures exhibits a crossover from $n_{\rm H} \approx x$ to $n_{\rm H} \approx 1+x$ near $x$ = 0.16, accompanied by \textcolor{blue}{a five-orders-of-magnitude increase in conductivity} and a six-fold enhancement in the electronic specific heat. These striking parallels in the bulk pseudogap phenomenology, coupled with the absence of superconductivity in electron-doped Sr$_2$IrO$_4$, disfavour the pseudogap as a state of precursor pairing and thereby narrow the search for the key ingredient underpinning the formation of the superconducting condensate in doped Mott insulators.