Area Selective Chemical Vapor Deposition of Gold by Electron Beam Seeding

Abstract

Chemical vapour deposition (CVD) is an established method for producing high-purity thin films, but it typically necessitates the pre- and post-processing of a mask to produce structures. This paper presents a novel maskless patterning technique that enables area selective CVD of gold. A focused electron beam is used to decompose the metal-organic precursor Au(acac)Me$_2$ locally, thereby creating an autocatalytically active seed layer for subsequent CVD with the same precursor. The procedure can be included in the same CVD cycle without the need for clean room lithographic processing. Moreover, it operates at low temperatures of 80 {\deg}C, over 200 K lower than standard CVD temperatures for this precursor, reducing thermal load on the specimen. Given that electron beam seeding operates on any even moderately conductive surface, the process does not constrain device design. This is demonstrated by the example of vertical nanostructures with high aspect ratios of around 40:1 and more. Written using a focused electron beam and the same precursor, these nanopillars exhibit catalytically active nuclei on their surface. Furthermore, they allow for the first time the precise determination of the local temperature increase caused by the writing of nanostructures with an electron beam.