Kinetic inductance in superconducting CoSi2 coplanar microwave transmission lines
Abstract
We have looked into cobalt disilicide (CoSi2) as a potential building block for superconducting quantum circuits. In order to achieve this, we annealed a thin layer of Co to create 10-105 nm thick microwave cavities from CoSi2 embedded in the silicon substrate. The cavity properties were measured as a function of temperature and power. In films measuring 10 and 25 nm, we find a significant kinetic inductance LK with a non-BCS power-law variation δ LK T4.3 0.2 at low temperatures. The quality factor of the studied microwave resonances increased almost linearly with thickness, with two-level systems having very little effect. The power dependence of kinetic inductance was analyzed in terms of heat flow due to electron-phonon coupling, which was found stronger than estimated for heat relaxation by regular quasiparticles.
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