Effect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAs

Abstract

One of the basic optoelectronic characteristics is the absorption of any optoelectronic device or material. We present the characteristics of pure GaAs and the deviation of ideal spectra. Due to crystal defects, vacancies, impurities, etc., energy states exist in the semiconductor other than the allowed bands (conduction and valence bands). In this research, the effect of transitions between these states on absorption spectra and how the absorption coefficients change with the density and location of those states are analyzed numerically. Among the cases of 0.07 eV, 0.12 eV, and 0.17 eV with the density of 2%, 5%, 10%, 20%, and 30%, the minimum deviation occurs for the states located 0.07 eV below the conduction band and when the energy states have the minimum density of 2% and the deviation increases for the cases of 0.12 eV and 0.17 eV with higher densities.