Multimechanism quantum anomalous Hall and Chern number tunable states in germanene (silicene, stanene)/$M$Bi$_2$Te$_4$ heterostructures

Abstract

By constructing germanene (silicene, stanene)/$M$Bi$_2$Te$_4$ ($M$ = 3d-transition elements) heterostructures, we discovered and designed multimechanism quantum-anomalous-Hall (QAH) systems, including $\Gamma$-based QAH, $K$-$K'$-connected QAH, and valley-polarized $K$- or $K'$-based QAH states via first-principle computations. The unique systems possess a global gap and tunable Chern number. The coexisting conventional $\Gamma$-based QAH state of $M$Bi$_2$Te$_4$ and valley-polarized $K$($K'$)-based QAH state of germanene (silicene, stanene), with opposite chirality, can interact with each other. Adjusting magnetic configurations of $M$Bi$_2$Te$_4$-layers not only switch on (off) the QAH conductance, but also modulate Chern numbers exactly. For example, the germanene/bilayer-NiBi$_2$Te$_4$ possesses the Chern number $C = +1$ in ferromagnetic couplings and $C = +2$ in antiferromagnetic couplings. The novel multimechanism QAH insulators, which are achievable in experiments, provide a new approach to spintronics and valleytronics based on topological states of matter.