Non-zero crossing current-voltage characteristics of interface-type resistive switching devices

Abstract

A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work exploits a kinetic simulation model based on the stochastic cloud-in-a-cell method to capture these effects. The model, applied to Au/BiFeO$_{3}$/Pt/Ti interface-type devices, incorporates vacancy transport and capacitive contributions. The resulting nonlinear response, characterized by hysteresis, is analyzed in detail, providing an in-depth physical understanding of the virtual effects. Capacitive effects are modeled across different layers, revealing their significant role in shaping the non-zero crossing hysteresis behavior. Results from kinetic simulations demonstrate the impact of frequency-dependent impedance on the non-zero crossing phenomenon. This model provides insights into the effects of various device material properties, such as Schottky barrier height, device area and oxide layer on the non-zero crossing point.