Positron lifetime calculations for defects in Zn

Abstract

The effect of the lattice relaxation at vacancy clusters and interstitial-type dislocation loops on the lifetime of positrons in Zn has been studied. Defective relaxed structures have been generated for the lifetime calculations by using a many-body potential for Zn. From the results, it is inferred that the effect of the atomic relaxation is mainly significant for small vacancy clusters. The lifetime associated with interstitial-type loops is very sensitive to the loop structure and its surroundings. Previous experimental results are compared with the theoretical calculations.