Strategies for the alignment of electronic states in quantum-dot tunnel-injection lasers and their influence on the emission dynamics

Abstract

In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is crucial for the high efficiency of these processes and especially for the fast modulation dynamics of these lasers. In particular, the quantum mechanical nature of the tunneling process must be taken into account in the transition from two-dimensional quantum well states to zero-dimensional quantum dot states. This results in hybrid states, from which the scattering into the quantum-dot ground states takes place. We combine electronic state calculations of the tunnel-injection structures with many-body calculations of the scattering processes and insert this into a complete laser simulator. This allows us to study the influence of the structural design and the resulting electronic states as well as limitations due to inhomogeneous quantum-dot distributions. We find that the optimal electronic state alignment deviates from a simple picture in which the of the quantum-dot ground state energies are one LO-phonon energy below the injector quantum well ground state.