Fabry-Perot superconducting diode

Abstract

Superconducting diode effects (SDEs) occur in systems with asymmetric critical supercurrents $|I^c_+|\neq |I^c_-|$ yielding dissipationless flow in one direction $(e.g., +)$, while dissipative transport in the opposite direction $(-)$. Here we investigate the SDE in a phase-biased $\phi$ Josephson junction with a double-barrier resonant-tunneling InAs nanowire nested between proximitized InAs/Al leads with finite momentum $\hbar q$ Cooper pairing. Within the Bogoliubov-de Gennes (BdG) approach, we obtain the exact BCS ground state energy $\mathcal{E}_G(q,\phi)$ and $I^{c}_{+} \neq |I^{c}_{-}|$ from the current-phase relation $I_G(q,\phi) \sim \partial_{\phi}\mathcal{E}_G(q,\phi)$. The SDE arises from the accrued Andreev phase shifts $\delta \phi_{L,R}(q,\phi)$ leading to asymmetric BdG spectra for $q\neq 0$. Remarkably, the diode efficiency $\gamma=(I^{c}_{+} - |I^{c}_{-}|)/(I^{c}_{+} + |I^{c}_{-}|)$ shows multiple Fabry-Perot resonances $\gamma \simeq 26\%$ at the double-barrier Andreev bound states as the well depth $V_g$ is varied. Our $\gamma$ also features sign reversals for increasing $q$ and high sensitiveness to fermion-parity transitions. The latter enables $I^{c}_{+} (\phi_+)\rightleftarrows I^{c}_{-}(\phi_-)$ switchings over narrow phase windows, i.e., $\phi_+, \phi_- \in \Delta \phi\ll\pi$, possibly relevant for future superconducting electronics.