Thermal stability and phase transformation of α-, (ε)-, and γ-Ga2O3 thin films to β-Ga2O3 under various ambient conditions

Abstract

Phase transitions in metastable α-, (ε)-, and γ-Ga2O3 films to thermodynamically stable β-Ga2O3 during annealing in air, N2, and vacuum have been systematically investigated via in-situ high-temperature X-ray diffraction and scanning electron microscopy. These respective polymorphs exhibited thermal stability to around 471-525, 773-825, and 490-575 before transforming into β-Ga2O3, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0006) α-Ga2O3 (402) β-Ga2O3, (004) (ε)-Ga2O3 (310) and (402) β-Ga2O3, and (400) γ-Ga2O3 (400) β-Ga2O3. The phase transition of α-Ga2O3 to β-Ga2O3 resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The (ε)- and γ-Ga2O3 films converted to β-Ga2O3 via singular reconstructive transformations with small changes in volume and unchanged surface microstructures.

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