Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases
Abstract
We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10-2 across the 103-105 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.
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