Identifying impurities in a silicon substrate by using a superconducting flux qubit

Abstract

A bismuth-doped silicon substrate was analyzed by using a magnetometer based on a superconducting flux qubit. The temperature dependence of the magnetization indicates that the silicon substrate contains at least two signal sources, intentionally doped bismuth spins and a spin 1/2 system with a ratio of 0.873 to 0.127. In combination with a conventional electron spin resonance spectrometer, a candidate origin of the spin 1/2 system was identified as a dangling bond on the silicon surface. In addition, the spin sensitivity of the magnetometer was also estimated to be 12 spins/$\sqrt{\mathrm{Hz}}$ by using optimized dispersive readout.