Spin texture and tunneling magnetoresistance in atomically thin CrSBr

Abstract

The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, is of paramount significance for the development of two-dimensional spintronic nanodevices. In this letter, we present detailed magneto-transport and photoluminescence studies on few-layer CrSBr flakes utilizing a vertical tunneling device configuration. Our investigations revealed complex magnetic states along the evolutionary path of few-layer CrSBr. We observed intermediate states exhibiting identical net magnetization demonstrate rectification properties, reminiscent of a diode-like behavior at positive and negative bias voltages. Notably, in devices with 5-layer CrSBr, we detected an intriguing positive magnetoresistive state when subjected to an in-plane magnetic field along the b-axis. The implementation of the Mott two-current model successfully calculated the tunneling resistance of different magnetic states, thereby elucidating the spin configurations responsible for the observed transport phenomena. These insights not only provide new perspectives on the intricate spin textures of two-dimensional CrSBr but also highlight the efficacy of tunneling measurements as a sensitive method for probing magnetic order in van der Waals materials.