Record-High Electron Mobility and Controlled Low 1015 cm-3 Si-doping in (010) β-Ga2O3 Epitaxial Drift Layers
Abstract
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm-3 range and record-high room temperature Hall electron mobilities of up to 200 cm2/V.s, reaching the predicted theoretical maximum room temperature mobility value for β-Ga2O3. Growth of the homoepitaxial films was performed on Fe-doped (010) β-Ga2O3 substrates at a growth rate of 1.9 μm/hr using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 x 1015 cm-3 and Hall mobility of 196 cm2/V.s. Growth of intentionally Si-Doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 x 1015 cm-3 to 8.30 x 1015 cm-3 and exceptional Hall mobilities ranging from 194 - 200 cm2/V.s demonstrated. C-V measurements showed a flat charge profile with the ND+ - NA- values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with Carbon and Hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 μm thick β-Ga2O3 films and controllable doping into the mid 1015 cm-3 range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick β-Ga2O3 drift layers for next generation vertical β-Ga2O3 power devices.
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