Tunable interfacial Rashba spin-orbit coupling in asymmetric Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures

Abstract

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top Al$_x$In$_{1-x}$Sb barrier layer, the optimal structure with $x = 0.15$ shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm$^2$/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications.