Non-Abelian fractional quantum Hall states at filling factor 3/4

Abstract

Fractional quantum Hall states have been observed at filling factor =3/4 in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized at =3/4, which exhibit 12 fold ground state degeneracy on the torus. The properties of =3/4 states can be analyzed using two complementary approaches. In the first one, they are treated as particle-hole conjugate of =1/4 Moore-Read types states. In the second one, they are mapped to composite fermions with reverse flux attachment at effective filling factor 3/2, whose integral part realizes an integer quantum Hall state and the fractional part realizes =1/2 Moore-Read type states. For bilayer graphene with appropriate Landau level mixing, numerical calculations found 12 quasi-degenerate ground states on the torus at =3/4. Chiral graviton spectral functions of these states have one low energy peak with negative chirality and one high energy peak with positive chirality. This points to a specific member of the Moore-Read type states and agrees with the deduction based on daughter states.

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