Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe2
Abstract
Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe2. We find that atomic impurities which locally shift the Fermi level (EF) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at EF. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe2, and provide a local understanding of the electron-doping mediated CDW transition observed in semiconducting TMDs.
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