Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications

Abstract

For the first time at the Beam Test Facility of the DA{\Phi}NE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DA{\Phi}NE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.