TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization

Abstract

This study optimizes 28 nm planar MOSFET technology to reduce device leakage current and enhance switching speed. The specific aims are to decrease subthreshold swing (S.S.) and mitigate drain induced barrier lowering (DIBL) effect. Silvaco TCAD software is used for process (Athena) and device (Atlas) simulations. For the further development of MOSFET technology, we implemented our device (planar 28 nm n-MOSFET) with high-k metal-gate (HK/MG), lightly doped drain (LDD), multiple spacers (mult-spacers), and silicide. Simulation validation shows improvements over other 28 nm devices, with lower static power consumption and notable optimizations in both S.S. (69.8 mV/dec) and DIBL effect (30.5 mV/V).