Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration
Abstract
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe2 using sputtered W-films on SiO2/Si substrates followed by electrical studies under dark and illumination conditions. Growth temperature 500oC and gas pressure 55 sccm are found to be the optimized parameters for formation of thermodynamically stable WSe2-x with dominant Raman peak at 265 cm-1. XRD and HR-TEM measurement clarify the formation of high crystallinity along the c-axis and quasi-crystallinity along a and b axes respectively. Lower intensities from Raman-measurement and PL-peak at 768 nm (with 532 nm excitation wavelength) infers the thin nature of the grown film, along with strong second harmonic emission with excitation wavelength varying from 350nm to 450 nm. This work also retracks the controlled etching by reactive ions to achieve large area bi/tri-layer films to fabricate advanced devices. We also have fabricated an advanced MOS structure on SiO2/p-Si substrate which shows tremendous performance by means of photo-capacitance under illumination condition where photo-carriers can survive the higher probe frequencies (> 1MHz). Under illumination condition, HfO2/WSe2 embedded MOS shows its dominance showing a huge electron-inversion region over HfO2/ SiO2/p-Si and SiO2/p-Si MOS devices even at high frequencies (1-10 MHz). Thereby, this work also reveals a possible route for capacitance based highly sensitive photodetection using conventional Si-technology with integration of such WSe2/W as an active material.
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