Phosphorene Junctions as a Platform for Spin-Selective Quantum Dots in Next-Generation Devices

Abstract

The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions, are investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon (PNR) containing a monovacancy is found to exhibit a topological quasi-flat band that emerges within the band gap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be strongly tuned by controlling the topological structure of the QDs and by applying electric fields. Additionally, these QDs exhibit remarkable spin-selective properties under a ferromagnetic exchange field, enabling the manipulation of QD features. This opens up the potential for novel applications such as quantum computing, magnetic sensing, spin-based light emission.