Persistence of Entangled States and High Fidelity Quantum Gate Operations in Si/SiGe Spin Qubits at High Temperature

Abstract

We characterize single- and two-qubit operations in a SiGe quantum dot array, from the perspective of its quantum information processing capabilities. The analysis includes rigorous randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography, which are all basic functionality required for universal quantum computation. To assess compatibility with integrated cryogenic electronics, we evaluate qubit performance at 350 mK, 500 mK, and 750 mK, with high fidelity single and two qubit operations. The highest temperature, 750 mK, falls within the realistic thermal budget for practical integrated cryogenic electronics and represents the highest operating temperature reported for this qubit platform.