Real-Space Imaging of the Band Topology of Transition Metal Dichalcogenides

Abstract

The topological properties of Bloch bands are intimately tied to the structure of their electronic wavefunctions within the unit cell of a crystal. Here, we show that scanning tunneling microscopy (STM) measurements on the prototypical transition metal dichalcogenide (TMD) semiconductor WSe$_2$ can be used to unambiguously fix the location of the Wannier center of the valence band. Using site-specific substitutional doping, we first determine the position of the atomic sites within STM images, establishing that the maximum electronic density of states at the $K$-point lies between the atoms. In contrast, the maximum density of states at the $\Gamma$ point is at the atomic sites. This signifies that WSe$_2$ is a topologically obstructed atomic insulator, which cannot be adiabatically transformed to the trivial atomic insulator limit.