Band gap renormalization, carrier mobility, and transport in Mg2Si and Ca2Si: Ab initio scattering and Boltzmann transport equation study

Abstract

We perform first-principles electron-phonon interaction (EPI) calculations based on many-body perturbation theory to study the temperature-dependent band-gap and charge-carrier transport properties for Mg2Si and Ca2Si using the Boltzmann transport equation (BTE) under different relaxation-time approximations (RTAs). For a PBE band gap of 0.21 (0.56) eV in Mg2Si (Ca2Si), a zero-point renormalization correction of 29-33 (37-51) meV is obtained using various approaches, while the gap at 300 K is 0.15-0.154 (0.46-0.5) eV. The electron mobility (μe), with a detailed convergence study at 300 K, is evaluated using linearized (self-energy and momentum RTA, or SERTA and MRTA) and iterative BTE (IBTE) solutions. At 300 K, the μe values are 351 (100), 573 (197), and 524 (163) cm2V-1s-1 from SERTA, MRTA, and IBTE, respectively, for Mg2Si (Ca2Si). SERTA (MRTA) provides results in better agreement with IBTE at higher (lower) temperatures, while SERTA-derived μe closely matches experimental μe values for Mg2Si. Thermoelectric (TE) transport coefficients significantly influenced by the choice of RTA, with SERTA and MRTA yielding improved agreement with experimental results compared to constant RTA (CRTA) for Mg2Si over an electron concentration range of 1017 to 1020 cm-3. The lattice thermal conductivity (ph) at 300 K due to phonon-phonon interactions is estimated to be 22.7 (7.2) W m-1K-1 for Mg2Si (Ca2Si). The highest calculated figure of merit (zT) under CRTA is 0.35 (0.38), which decreases to 0.08 (0.085) when EPI is included using MRTA. This study clearly identifies the critical role of EPI in accurate transport predictions of TE silicides. Finally, we explore strategies to enhance zT by reducing ph through nanostructuring and mass-difference scattering.

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