Linear magnetoresistance, anomalous Hall effect and de Haas-van Alphen oscillations in antiferromagnetic SmAg2Ge2 single crystals
Abstract
Understanding the interplay among magnetism, electron correlations, and complex electronic structures in rare-earth materials requires both high-quality single crystals and systematic investigation of their electronic properties. In this study, we have successfully grown a single crystal of SmAg2Ge2 and investigated its anisotropic physical properties and de Haas-van Alphen (dHvA) quantum oscillations through experimental and theoretical approaches. SmAg2Ge2 crystallizes in the well known ThCr2Si2-type tetragonal structure with lattice parameters, a~=~4.226~~ and c~=~11.051~. Electrical transport and magnetization measurements indicate that it is metallic and exhibit antiferromagnetic ordering below the N\'eel temperature, T N = 9.2~K. SmAg2Ge2 exhibits a linear non-saturating magnetoresistance, reaching 97\% at 2~K for applied magnetic field B~~[001] and a significant anomalous Hall effect with an anomalous Hall angle of 0.10-0.14. Additionally, magnetization measurements reveal dHvA quantum oscillations for magnetic fields greater than 8~T. Our calculated electronic structure, quantum oscillations, and anomalous Hall effect in the canted antiferromagnetic state closely align with experimental results, underscoring the role of complex electronic structure and spin-canting-driven non-zero Berry curvature in elucidating the physical properties of SmAg2Ge2
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