Twisted heterobilayer photonic crystal based on stacking and selective etching of 2D materials

Abstract

Nanophotonic devices with moir\'e superlattice is currently attracting broad interest due to the unique periodicity and high efficiency control of photons. Till now, experimental investigations mainly focus on the single layer device, i.e., two or more layers of photonic crystal patterns are merged and etched in a single layer of material. By comparison, twisted photonic crystal with multilayer materials raises challenges in the nanofabrication technology, because the growth of upper layer material usually requires a smooth bottom layer without nanostructures. Hereby, we fabricate twisted heterobilayer photonic crystal in the graphite/Si$_3$N$_4$ heterostructure. We use dry transfer method to stack the graphite on top of bottom Si$_3$N$_4$ with pre-etched photonic crystal patterns. Selective dry etching recipes are used to etch two photonic crystal layers individually, which improves the quality and accuracy in alignment. The cavity photonic mode at the visible wavelength $\sim 700$ nm arsing from the moir\'e site is clearly observed in experiment. These results reveal the experimental diagram of heterobilayer nanophotonic devices and open the way to design flexibility and control of photons in new degrees of freedom.