Shift current response in twisted double bilayer graphenes

Abstract

We calculate the shift current response in twisted double bilayer graphenes (TDBG) by applying the perturbative approach to the effective continuum Hamiltonian. We have performed a systematic study of the shift current in AB-AB and AB-BA stacked TDBG, where we have investigated the dependence of the signal on the twist angle, the vertical bias voltage and the Fermi level. The numerical analyses demonstrate that the signal is greatly enhanced as the twist angle is reduced. Notably, we also found that there is a systematic sign reversal of the signal in the two stacking configurations below the charge neutrality point for large bias voltages. We qualitatively explain the origin of this sign reversal by studying the shift current response in AB-stacked bilayer graphene.