Terahertz radiation generation by laser-resonant excitation of terahertz surface magnetoplasmons on a graphene-n-InSb semiconductor interface

Abstract

We propose a method for the laser-excitation of terahertz surface magnetoplasmons via the linear mode conversion of terahertz radiation on a graphene sheet deposited on an n-type semiconductor in presence of an external magnetic field parallel to the semiconductor surface. An obliquely incident p-polarized laser beam interacting with the graphene n-InSb semiconductor surface, imparts linear oscillatory velocity to the free electrons. This oscillatory velocity couples with the modulated electron density to generate a linear current density, which resonantly excites terahertz surface magnetoplasmons. It is shown that the amplitude of terahertz surface magnetoplasmons wave can be tuned by adjusting the external magnetic field ($\text{B}_{0}$), the graphene's Fermi energy ($\text{E}_\text{F}$), the semiconductor's temperature (T), and the incident angle ($\theta$) of laser. This mechanism has the potential to enable the development of an actively tunable plasmonic device.