Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Abstract

The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non confining potential with an intrinsic lifetime around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-band gap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations.