Multimodal Shifts in the Dark Current of Silicon Photomultipliers

Abstract

The dark count rate is one of the key properties of avalanche photodiodes (APDs) and silicon photomultipliers (SiPMs). Previous studies have reported discrete shifts in the dark count rate on short timescales ~10 ms to ~100 s with small increases (up to ~1 kHz per APD). In this study, we report a similar yet distinct phenomenon in the dark current of SiPMs designed for gamma-ray telescopes. Long-term stability tests (>100 days) revealed bimodal or multimodal dark current shifts of the order of 0.1 uA on timescales of days in 48 out of 128 SiPM channels. In addition, optical emission was observed from an APD surface when the dark current was in a high state. These findings suggest that multimodal dark current behavior is a common property of SiPMs, which may be due to defects in the silicon.