A Full Spectrum of 3D Ferroelectric Memory Architectures Shaped by Polarization Sensing

Abstract

Ferroelectric memories have attracted significant interest due to their non-volatile storage, energy efficiency, and fast operation, making them prime candidates for future memory technologies. As commercial Dynamic Random Access Memory (DRAM) and NAND flash memory are transiting or have moved toward three-dimensional (3D) integration, 3D ferroelectric memory architectures are also emerging, provided they can achieve a competitive position within the modern memory hierarchy. Given the excellent scalability of ferroelectric HfO2, various dense 3D integrated ferroelectric memory architectures are feasible, each offering unique strengths and facing distinct challenges. In this work, we present a comprehensive classification of 3D ferroelectric memory architectures based on polarization sensing methods, highlighting their critical role in shaping memory cell design and operational efficiency. Through a systematic evaluation of these architectures, we develop a unified framework to assess their advantages and trade-offs. This classification not only enhances the understanding of current 3D ferroelectric memory technologies but also lays the foundation for designing next-generation architectures optimized for advanced computing and high-performance applications.