Study on P-Type Doping of Mid-Wave and Long-Wave Infrared Mercury Cadmium Telluride
Abstract
We present in depth study of p-type doping concentration of mid-wave infrared (MWIR) and long-wave infrared (LWIR) mercury cadmium Telluride (HgCdTe) thin films. Annealing time was changed under specific conditions to achieve a stable copper (Cu) doping concentration for HgCdTe thin films. Both MWIR and LWIR HgCdTe material were grown by molecular beam epitaxy (MBE), where different trends were observed between LWIR and MWIR HgCdTe thin films by increasing anneal time. We also report the impact of different thickness (4 micron, 6 micron and 9 micron) along with annealing time on doping level of LWIR HgCdTe thin films.
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