Low-loss Sb2S3 Optical Phase Shifter Enabled by Optimizing Sputtering Conditions
Abstract
By quantitatively evaluating the atomic concentrations of sputtered Sb2S3 films with different sputtering powers and Ar flows, we reveal that a sputtered Sb2S3 film becomes close to the stoichiometric composition as the sputtering power and Ar flow decrease. We characterize the optical properties of Sb2S3 and show that the lower sputtering power leads to a better figure of merit of Sb2S3 as an optical phase shifter in the near infrared (NIR) range. Based on these results, we achieve a loss per phase shift of 0.33 dB/π at a wavelength of 1.55 μm, one of the lowest losses among Sb2S3 phase shifters in the NIR range.
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