Phonon Mean Free Path Spectroscopy By Raman Thermometry
Abstract
In this work, we exemplify on a bulk silicon sample that Raman thermometry is capable of phonon mean free path (PMFP) spectroscopy. Our experimental approach is similar to the variation of different characteristic length scales lc during thermal reflectance measurements in the time or frequency domain and transient thermal grating spectroscopy. In place of lc, we vary the laser focus spot size (we) and the light penetration depth (hα) during one-laser Raman thermometry (1LRT) measurements. For our largest we values, the derived effective thermal conductivities eff converge towards the bulk thermal conductivity bulk for silicon. However, towards smaller we values, we observe a pronounced increase for the eff values, which amounts up to a factor of 5.3 at 293K and even 8.3 at 200K. We mainly assign this phenomenon to quasi-ballistic phonon transport. As a result, we can compare our measured eff(we) trends with the thermal accumulation function cum and its dependence on the phonon mean free path lph, which we derive from ab initio solutions of the linearized phonon Boltzmann transport equation (BTE). Since the variation of we can be experimentally cumbersome, we also suggest varying hα(λ) via the applied Raman laser wavelength λ during 1LRT. In this regard, we present proof-of-principle 1LRT measurements, yielding a step-like eff(λ) trend for four different λ values, which we also interpret in terms of quasi-ballistic phonon transport. Our results shall seed future PMFP spectroscopy based on 1LRT, which can directly be benchmarked against state-of-art theory by comparison of cum trends and not only values, aiming to test our understanding of the intricate phonon transport physics.
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