Resonant interlayer coupling in NbSe2-graphite epitaxial moir\'e superlattices
Abstract
Moir\'e heterostructures, created by stacking two-dimensional (2D) materials together with a finite lattice mismatch or rotational twist, represent a new frontier of designer quantum materials. Typically, however, this requires the painstaking manual assembly of heterostructures formed from exfoliated materials. Here, we observe clear spectroscopic signatures of moir\'e lattice formation in epitaxial heterostructures of monolayer (ML) NbSe2 grown on graphite substrates. Our angle-resolved photoemission measurements and theoretical calculations of the resulting electronic structure reveal moir\'e replicas of the graphite π states forming pairs of interlocking Dirac cones. Interestingly, these intersect the NbSe2 Fermi surface at the k-space locations where NbSe2's charge-density wave (CDW) gap is maximal in the bulk. This provides a natural route to understand the lack of CDW enhancement for ML-NbSe2/graphene as compared to a more than four-fold enhancement for NbSe2 on insulating support substrates, and opens new prospects for using moir\'e engineering for controlling the collective states of 2D materials.
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