Superstrate structured Sb2S3 thin-film solar cells by magnetron sputtering of Sb and post-sulfurization
Abstract
We report on the fabrication and optimization of semi-transparent antimony sulfide (Sb2S3) thin-film solar cells in a superstrate configuration, using RF magnetron sputtering of metallic antimony followed by post-deposition sulfurization. The influence of absorber and buffer layer thicknesses on device performance was systematically studied in FTO/CdS/Sb2S3/Spiro-OMeTAD/Au architectures. Optimizing the Sb2S3 absorber thickness to 100 nm yielded a champion device with a power conversion efficiency of 2.76\%, short-circuit current density of 14 mA/cm2, and open-circuit voltage of 650 mV. The devices exhibit up to 20\% transmittance in the 380--740 nm wavelength range, indicating their suitability for indoor and building-integrated photovoltaic applications. Structural and compositional analyses confirmed high-purity Sb2S3 (more than 90 at.\%) and improved crystallinity after sulfurization. These results demonstrate the potential of sputtered Sb2S3 as a scalable and tunable absorber for emerging transparent thin-film solar technologies and highlight the critical role of thickness optimization and interface control in device performance.
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