Intrinsic defects as a source of $\textit{n}$-type conductivity in CrSBr

Abstract

Understanding and controlling native defects is essential for unlocking the full potential of two-dimensional magnetic semiconductors. Here, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations are used to explore the electronic properties of bulk CrSBr. ARPES measurements reveal clear signatures of conduction band filling in as-grown crystals, indicative of unintentional doping. An analysis of intrinsic defects based on density functional theory (DFT) identifies chromium interstitials ($Cr_i$) stabilized between CrSBr layers as the most favorable shallow donors. Bromine-on-sulfur antisites ($Br_S$) and bromine vacancies ($V_{Br}$) are also found to act as potential donors, albeit with deeper ionization energies. Our results shed light on the origin of unintentional $\textit{n}$-type doping of CrSBr and pave the way for new strategies for defect control and electronic property tuning in this van der Waals magnet.