A Morphologically Self-Consistent Phase Field Model for the Computational Study of Memristive Thin Film Current-Voltage Hysteresis

Abstract

A multiphysics phase field model is used for the computational study of memristive thin film morphology and current-voltage hysteresis. In contrast to previous computational methods, no requirements are made on conducting filament geometry. Our method correctly predicts conducting filaments evolve on thermodynamic paths that are energetically favored due to stochastic structural and chemical variations naturally occurring at the atomic-level, due to both latent and intentional fabrication effects. These results have significant implications for the computational design of a broad class of memristive thin films, enabling practical wafer-scale mapping, uniformity, and endurance analysis and optimization.