Quantum Quenches from the Critical Point: Theory and Experimental Validation in a Trapped-Ion Quantum Simulator

Abstract

We investigate quantum quenches starting from a critical point and experimentally probe the associated defect statistics using a trapped-ion quantum simulator of the transverse-field Ising model. The cumulants of the defect number distribution exhibit universal scaling with quench depth, featuring Gaussian behavior at leading order and systematic subleading corrections. Our results are in excellent agreement with both exact and approximate theoretical predictions, establishing quench-depth scaling as a powerful and precise experimental benchmark for nonequilibrium quantum critical dynamics.