Thickness-Dependent Spin Pumping in YIG/W90Ti10 Bilayers
Abstract
We investigate the spin pumping efficiency in YIG/YIG/W90Ti10 bilayers by measuring the thickness dependence of both the YIG and WTi layers using broadband ferromagnetic resonance (FMR) spectroscopy. The deposition of a 5-nm WTi layer leads to enhanced Gilbert damping in thinner YIG films, indicating efficient spin current injection. From the spin pumping contribution to the damping of the YIG/WTi bilayer, we determine an effective spin mixing conductance of 3.3 × 1018~m-2 for the 5-nm WTi layer. Further measurements with varying WTi thickness reveal a non-monotonic dependence of spin mixing conductance, peaking at 4.2 × 1018~m-2 for a 3-nm WTi layer. This behavior is attributed to a structural phase transition from the high-spin--orbit β -phase to the less efficient α -phase in thicker WTi layers. Furthermore, comparative analysis with YIG/W bilayers shows that Ti doping significantly reduces geff . These findings highlight the critical role of alloy composition and structural phase in tuning spin transport for spintronic applications.
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