Domain Wall-mediated Interfacial Ferroelectric Switching

Abstract

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types and their impact on polarization stability lacks fundamental understanding. By integrating first-principles calculations, machine learning methods, and experimental validations, we show that domain walls connect opposite polarization states and respond to out-of-plane electric field through polarization vector deviation, leading to inhomogeneous interlayer sliding and domain-wall migration. This mechanism bears clear resemblance to that in traditional ferroelectrics. Notably, different domain wall types result in distinct switching behaviors, which play a crucial role in determining the reversibility of polarization switching. We then propose strategies beyond ideal conditions to achieve non-volatile ferroelectric switching, which are supported by our experimental observations. These insights shed light on the microscopic switching mechanism in hexagonal interfacial ferroelectrics, offering guidance for future nanoelectronics applications.