Development of Solar Flare X-ray Polarimeter with Micro-Pixel CMOS Sensors

Abstract

We are developing an X-ray polarimeter using micro-pixel CMOS sensors for solar flare X-ray polarimetry. The system consists of a 2.5-$\mu$m pixel CMOS image sensor with a 12.8$\times$12.8 mm$^2$ imaging area and a readout system based on a Zynq System-on-Chip. While previous studies have validated this concept, no realistic feasibility studies have been conducted for the solar flare X-ray polarization observation. In this work, we performed polarization sensitivity measurements at synchrotron facilities. The results show that our polarimeter is sensitive to the X-ray polarization, exhibiting a modulation factor of 5-15% at an energy range of 6-22 keV. The measurements also determined the thickness of the sensitive layer to be approximately 5 $\mu$m, and the thicknesses of the insensitive layers to be 0.8 $\mu$m (Si), 2.1 $\mu$m (SiO2), and 0.24 $\mu$m (Cu). These measured thicknesses lead to a quantum efficiency of 3-4% at 10 keV. Based on these experimental evaluations, we estimated the sensitivity of the micro-pixel CMOS polarimeter system. We found that, when combined with a telescope with an effective area of $\sim$10 cm$^2$, this system can detect X-ray polarization with a polarization degree of a few percent for M-class flares.