Enhanced magnetic field sensitivity of shallow NV- ensembles via high-temperature implantation
Abstract
Dense and shallow ensembles of negatively charged nitrogen-vacancy centers (NV-) with good optical and spin properties play a key role in the performance enhancement of diamond-based quantum sensors. Ion implantation enables precise control of NV- depth and density. However, at high ion fluence, this method is limited by low NV- creation yields and sample amorphization. Additionally, shallow NV- spin properties deteriorate due to surface proximity. In this paper, we study N2+ ion implantation at energies between 10 and 15 keV with fluences as high as 1e15 ions/cm2 at temperatures of 20, 400 and 800C to investigate the influence of implantation temperature on lattice damage, NV- creation yield and NV- spin properties. Our results show that diamond maintains structural integrity at 800C with fluences up to 1e15 ions/cm2 without amorphization. Furthermore, high-temperature implantation improves NV- creation yields up to five times without compromising T2*, T2 and T1, making it a promising approach to enhance the magnetic field sensitivity of NV- ensembles.
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