Intrinsic Resistive Switching in Microtubule-Templated Gold Nanowires for Reconfigurable Nanoelectronics

Abstract

The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory, has been widely demonstrated in oxides, semiconductors, and nanocomposites, but not in pure one-dimensional metallic systems. Here, we report the first electrical characterization of gold nanowires (AuNWs) synthesized within the lumen of functionalized microtubules. Structural analyses confirm continuous metallic wires with local compositional inhomogeneities. Electrical measurements reveal three distinct conduction behaviours and abrupt, reversible resistance transitions under applied bias, consistent with defect-driven electromigration. Voltage pulsing enables active and reproducible modulation of resistance states without loss of metallic conduction, establishing a new RS mechanism intrinsic to pure metallic nanowires. Owing to their high aspect ratio, lateral geometry, and CMOS-compatible processing, microtubule-templated AuNWs provide a versatile platform for reconfigurable interconnects and neuromorphic device architectures.