Non-epitaxial perovskite polariton laser diode operating under direct current

Abstract

Reaching lasing in electrically pumped microdevices based on solution-processed semiconductors poses a major scientific and technological challenge. Halide perovskites offer a promising platform for electrical injection, since their optically excited single-crystal cavities and predesigned or postprocessed microstructures have exhibited low lasing threshold. Indirect electrical pumping of a dual-cavity perovskite laser was recently obtained, utilizing a well-established technological concept of embedding a high-luminosity light-emitting diode (LED) with a high-gain medium into an integrated device. Direct charge-carrier injection into a perovskite LED excited by auxiliary short-, optical-pulses resulted into amplified spontaneous emission. Other efforts for rational engineering of architectures that allow for high charge-carrier density are still to demonstrate lasing. Here, we develop a novel strategy for achieving direct electrical pumping of a perovskite laser. We integrate a solution-grown CsPbBr3 microplate with chemically inert single-walled carbon nanotube electrodes and embed them into an optical microcavity. By cooling the microdevice down to 8 K at a constant current, a perovskite p-i-n diode is formed that facilitates a balanced carrier injection at high current densities. The perovskite microcavity diode operates in the strong coupling regime, exhibiting polariton lasing under a direct current of 65 uA.