Uniaxial Magnetic Anisotropy and Type-X/Y Current-Induced Magnetization Switching in Oblique-Angle-Deposited Ta/CoFeB/Pt and W/CoFeB/Pt Heterostructures

Abstract

Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in heavy-metal/ferromagnet heterostructures. To enhance the SOT efficiency, we employ trilayer heterostructures of (Ta or W)/CoFeB/Pt, where the CoFeB layer exhibits a UMA of 50 mT at 2 nm thickness of Ta or W. The magnetization reversal in Hall-bar devices is detected through unidirectional spin Hall magnetoresistance (USMR) for the type Y geometry (easy-axis transverse to current) and planar Hall measurements for the type X geometry (easy-axis parallel to current). Both configurations exhibit CIMS with sub-microsecond current pulses, reaching switching current densities as low as $2 \times 10^{11}$ A/m$^2$ for a W (4 nm)/CoFeB (1.4 nm)/Pt (2 nm) stack with a UMA of 146 mT. Macrospin simulations reproduce the type Y switching as coherent magnetization rotation, whereas the type X devices switch at much lower currents than predicted, indicating that nucleation and domain-wall propagation dominate reversal in this geometry. Our results show that combining oblique-angle deposition with easy-axis engineering enables deterministic, field-free switching, paving the way for future low-power spintronic devices.