Effect of Misfit and Threading Dislocations on Surface Energies of PbTe-PbSe Interfaces

Abstract

This work quantifies the effect of misfit and threading dislocations on the surface energies of PbTe-PbSe interfaces, with the defect structures of the interfaces being obtained from atomistic and multiscale simulations of their manufacturing processes. Simulation results show that direct bonding produces semi-coherent interfaces with two-dimensional misfit dislocation networks, while heteroepitaxial processes produce complex three-dimensional dislocation structures with both misfit and threading dislocations. Surface energies at these interfaces were determined by computing the interaction energies across these interfaces. Compared with coherent interfaces, directly bonded interfaces exhibit up to ~23% lower surface energy, while the surface energies of epitaxially grown interfaces can be nearly 50% lower. The results demonstrate the significant effects of dislocations on interfacial energy.