In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales
Abstract
We investigate the surface flashover voltage threshold for SiO2, SiN, and AlN thin films over micrometre scale lengths. Furthermore, we test the effects of different etching chemistries on SiO2 layers. We find that there is little significant difference between untreated SiO2 samples and those that have been etched with hydrogen fluoride or Transene AlPad Etch 639. SiN and AlN samples performed significantly better than all SiO2 samples giving a 45% increase in surface flashover voltage at a distance of 5 μm with the difference increasing with electrode spacing.
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